VOLCANO® semi IGBT Laser Optics - INNOVAVENT Laseroptics

e-mail: info@innovavent.com phone: +49 551-900 47-0

e-mail: info@innovavent.com phone: +49 551-900 47-0

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VOLCANO® semi IGBT Laser Optics


Laser Optics for green IGBT Laser Backside Annealing & Ohmic Contact Formation on SiC.
Laser activation of bonded IGBT.
Activated Boron and Phosphorous dopant measured by SRP (courtesy FhI ISIT, Itzehoe).
The color of the Ni coated SiC is changing from grey to silver after laser treatment (green laser line length ~3mm).
The depth of the activation process is precisely controlled by selecting the laser beam parameters pulse duration, line width and scan speed. The Phosphorous fieldstop layer of an IGBT can be activated up to 2 µm deep. The VOLCANO® Laser Optics is either operated with a single or with two homogenizer coupled laser sources, depending on throughput requirements.

SiC high power electronics require ohmic contacts with low electrical resistance to avoid power losses and heating. The ohmic contacts are made from evaporated magnetron sputtered Ni of typical 200nm thickness. The electrical resistance into the semiconductor device is reduced 20% by using a green laser exposure.

Scope of Application
IGBT´s (insulated gate bipolar transistors) are processed on thinned wafers with a thickness of 100µm or less. Often these thinned wafers are mechanically stabilized by using the so-called TAIKO grinding process (DISCO Corp., Japan) and a protection tape on the already processed front side. This tape is not compatible with high process temperatures. If the activation is performed with the VOLCANO® semi IGBT Laser Optics, an activation rate of >75% can be achieved for both, the fieldstop and the emitter layer. The tape stays intact during this high temperature process.

SiC MOSFET inverter and SiC high power diodes require ohmic contacts with low electrical resistance to avoid power losses and heating. TiN, SiNi, Ni2Si and Ni are ohmic contact materials to n-type SiC. The ohmic contacts are made from evaporated magnetron sputtered layers of typical 200nm thickness. The electrical resistance into the semiconductor device is minimized by using a laser exposure to generate void-free Ni2Si. A pulsed 532nm laser line providing 4-6 J/cm2 energy density is scanned over the Ni-coated SiC wafer at a typical scan speed of 60mm/s. The pulsed energy deposition creates the NiSi, Ni2Si compound without heating the SiC bulk material and the semiconductor device can be completed without any risk of damage.
The combination of two laser pulses with controlled delay gives optimization of dopant activation and ohmic cntact formation.

Features
VOLCANO® semi IGBT Laser Optics:
g200 or Revolution 40/80 combined with FALCON® line beam optics.




Technical Data

Line length:
2 - 5 mm (FWHM)
Homogeneity:
6 sigma <=5 %
Wavelength
527, 532 nm
Line width:
30 µm FWHM typical
Energy density:
max. 5,000 mJ/cm²
Pulse duration:
variable 300, 500ns, double pulse synchronization
Laser:
g200, Revolution 40/50 (Spezifications by laser manufacturer on request)
Beam profile measurement:
CCD Camera with microscope objective



VOLCANO® Laser Optics includes an integrated attenuator module to adjust the energy density at the substrate level. Power meter heads and a CCD camera based beam profile measurement are available. VOLCANO® Laser Optics has high availability (>90 %), is reliable and has low cost of ownership.

Germany, Europa
INNOVAVENT GmbH
Reinhard-Rube Str. 4
37077 Göttingen, Germany
phone: +49-551-90047-0
fax:     +49-551-90047-19
e-mail: info@innovavent.com
www.innovavent.com
USA, Kanada, Asien
INNOVAVENT GmbH
Reinhard-Rube Str. 4
37077 Göttingen, Germany
phone: +49-551-90047-0
fax:     +49-551-90047-19
e-mail: info@innovavent.com
web: www.innovavent.com
Taiwan (ROC) and China (PRC)
SuperbIN Company. .Ltd
1F, No. 320, Sec. 1 Nei-Hu Road Taipei,
11493, Taiwan (ROC)
phone: +886-2-2657-0678
fax:     +559-2-2657-0388
e-mail: info@superbin.com.tw
www.superbin.com.tw
Japan, Taiwan (ROC), and
China (PRC) Optopia Co. Ltd.
611 West Tower
Kanagawa Science Park
3-2-1 Sakato Taksutu Kawasaki
Kanagawa, Japan 213-0012
phone: +81 44 812 5911
fax:     +81 44 812 5921
www.optopia.co.jp
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Customer Support Center Germany for: EO Technics Co., Ltd. 91 Dongpyeonro Anyang, Korea 431-803
© 2003 - 2021 INNOVAVENT Laseroptics
Customer Support Center Germany for:
EO Technics Co., Ltd. 91 Dongpyeonro Anyang,
Korea 431-803
© 2003 - 2021 INNOVAVENT Laseroptics
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